The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Aug. 15, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Wenhui Li, Guangdong, CN;
Yifan Wang, Guangdong, CN;
Chihyu Su, Guangdong, CN;
Xiaowen Lv, Guangdong, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Abstract
The present invention provides method for manufacturing a TFT backplane and a structure of a TFT backplane. The method includes (1) forming a gate terminal () and a first metal electrode Mon a substrate (); (2) sequentially forming a gate insulation layer (), a semiconductor layer, and an etch stop layer on the gate terminal (), the first metal electrode M, and the substrate () in a successive manner and applying a photolithographic operation to form an island-like semiconductor layer () and an island-like etch stop layer (); (3) applying a photolithographic operation to patternize the island-like etch stop layer () and the gate insulation layer () to form a plurality of etch stop layer vias () and a gate insulation layer via (); (4) forming source/drain terminals () and a second metal electrode M; (5) forming a passivation protection layer (); (6) forming a planarization layer (); (7) forming a pixel electrode layer (); (8) forming a pixel definition layer (); and (9) forming a spacer pillar ().