The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Mar. 20, 2017
Toshiba Memory Corporation, Minato-ku, JP;
Kenta Yamada, Yokkaichi, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A semiconductor memory device includes a conductive layer; electrode layers stacked on the conductive layer; an insulating body extending through the electrode layers; and a semiconductor layer positioned between the insulating body and the electrode layers. The plurality of electrode layers include a first electrode layer, a second electrode layer provided between the conductive layer and the first electrode layer, and a third electrode layer provided between the conductive layer and the second electrode layer, and the semiconductor layer has a first layer thickness between the insulating body and the first electrode layer, a second layer thickness between the insulating body and the second electrode layer and a third layer thickness between the insulating body and the third electrode layer. The first layer thickness is thinner than the second layer thickness, and the second layer thickness is thinner than the third layer thickness.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile