The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Mar. 06, 2015
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Xiaogan Liang, Ann Arbor, MI (US);
Hongsuk Nam, Ann Arbor, MI (US);
Sungjin Wi, Ann Arbor, MI (US);
Mikai Chen, Ann Arbor, MI (US);
Assignee:
The Regents of The University of Michigan, Ann Arbor, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11568 (2017.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01); H01L 21/467 (2006.01); B29C 59/02 (2006.01); H01L 29/16 (2006.01); H01L 31/068 (2012.01); H01L 29/786 (2006.01); H01L 21/3065 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); B29C 59/02 (2013.01); H01L 21/3065 (2013.01); H01L 21/467 (2013.01); H01L 29/1606 (2013.01); H01L 29/4234 (2013.01); H01L 29/66833 (2013.01); H01L 29/78681 (2013.01); H01L 29/792 (2013.01); H01L 31/032 (2013.01); H01L 31/068 (2013.01); H01L 31/18 (2013.01); H01L 31/1884 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer structure of atomically thin two-dimensional sheets.
Liang, Xiaogan. (2018). Field effect transistor memory device (U.S. Patent No. 9960175). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9960175
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile