The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jul. 09, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 27/088 (2006.01); H01L 21/336 (2006.01); H01L 21/70 (2006.01); H01L 27/06 (2006.01); H01L 27/082 (2006.01); H01L 29/423 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H03K 17/687 (2006.01); H03K 19/0185 (2006.01); H01L 29/40 (2006.01); H01L 29/732 (2006.01); H01L 29/735 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 27/088 (2013.01); H01L 27/0826 (2013.01); H01L 29/1095 (2013.01); H01L 29/42372 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H03K 17/687 (2013.01); H03K 19/018507 (2013.01); H01L 29/0634 (2013.01); H01L 29/402 (2013.01); H01L 29/735 (2013.01); H01L 29/7327 (2013.01); H01L 29/781 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7824 (2013.01); H01L 2924/0002 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01); H03K 2217/0081 (2013.01);
Abstract
An integrated semiconductor device is provided. According to an embodiment, the integrated semiconductor device includes a semiconductor body having a first surface with a normal direction defining a vertical direction, an opposite surface, a first area including a vertical power field-effect transistor structure, a second area including a three-terminal step-down level-shifter, and a third area including a three-terminal step-up level-shifter. A terminal of the vertical power field-effect transistor structure is electrically connected with one of the three-terminal step-down level-shifter and the three-terminal step-up level-shifter.