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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9960153 B1

PDFFull Text
Date of Patent:
May. 01, 2018

Filed:

Jun. 08, 2015

Semiconductor device and electronic apparatus of a cascode-coupled system

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, JP;

Inventors:

Satoru Akiyama, Tokyo, JP;

Hiroyoshi Kobayashi, Kawasaki, JP;

Hisao Inomata, Kawasaki, JP;

Sei Saitou, Kawasaki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Davienne Monbleau

Assistant Examiner:

Leslie Pilar Cruz

Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 25/18 (2006.01); H01L 21/82 (2006.01); H03F 1/22 (2006.01); H01L 23/498 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/8213 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/49844 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/78 (2013.01); H01L 29/808 (2013.01); H03F 1/223 (2013.01); H03F 1/226 (2013.01); H01L 23/3107 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/49113 (2013.01); H01L 2924/181 (2013.01);
Abstract

The manufacturing yield of a semiconductor device is improved. There is provided a semiconductor device of a cascode coupling system, which is equipped with a plurality of normally-on junction FETs using as a material, a substance larger in bandgap than silicon, and a normally-off MOSFET using silicon as a material. At this time, the semiconductor chip has a plurality of junction FET semiconductor chips (semiconductor chip CHPand semiconductor chip CHP) formed with the junction FETs in a divided fashion, and a MOSFET semiconductor chip (semiconductor chip CHP) formed with the MOSFET.

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