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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9960086 B1

PDFFull Text
Date of Patent:
May. 01, 2018

Filed:

Sep. 23, 2016

Methods, apparatus and system for self-aligned retrograde well doping for finfet devices

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Mira Park, Clifton Park, NY (US);

Kwan-Yong Lim, Niskayuna, NY (US);

Steven Bentley, Menands, NY (US);

Amitabh Jain, Malta, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Williams Morgan, P.C.

Primary Examiner:

Caleen Sullivan

Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/82 (2006.01); H01L 21/30 (2006.01); H01L 21/8238 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/223 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823892 (2013.01); H01L 21/2236 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/324 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01);
Abstract

At least one method, apparatus and system are disclosed for forming a fin field effect transistor (finFET) having doping region self-aligned with a fin reveal position. A plurality of fins of a transistor is formed. A nitride cap layer on the plurality of fins is formed. An N-type doped region in a first portion of the plurality of fins. A P-type doped region in a second portion of the plurality of fins. A shallow trench isolation (STI) fill process for depositing an STI material on the plurality of fins. A fin reveal process for removing the STI material to a predetermined level. A cap strip process for removing the nitride cap layer for forming a fin reveal position that is self-aligned with the P-type and N-type doped regions.

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