The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Dec. 04, 2017
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Nam Kyun Park, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 5/02 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823437 (2013.01); G11C 5/02 (2013.01); G11C 11/16 (2013.01); G11C 11/1659 (2013.01); G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/0016 (2013.01); H01L 21/823418 (2013.01); H01L 27/228 (2013.01); H01L 27/249 (2013.01); H01L 27/2436 (2013.01); H01L 29/42376 (2013.01); G11C 2213/71 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1226 (2013.01); H01L 45/147 (2013.01);
Abstract
A stack type memory device and a method of manufacturing the same are provided. The stack type memory device includes a semiconductor substrate, a plurality of active layers stacked on the semiconductor substrate, and a gate structure overlapping the plurality of active layers. The gate structure includes a side gate region overlapping sides of the plurality of active layers and a top gate region overlapping a top of an uppermost active layer.