Methods of forming thin films and methods of fabricating integrated circuit devices using the same

Abstract

Provided herein are methods of forming thin films. In some embodiments, to form a thin film, a precursor adsorption layer including an organic ligand is formed by supplying a precursor including a metal or silicon central atom, and the organic ligand onto a lower structure. An intermediate result layer is formed by supplying a non-oxidant onto the precursor adsorption layer. In forming the intermediate result layer, the organic ligand included in the precursor adsorption layer is substituted with a substituent. An oxide film including the central atom is formed from the intermediate result layer by supplying an oxidant onto the intermediate result layer.