The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Mar. 08, 2017
Junwei Liu, Cambridge, MA (US);
Kai Chang, Halle/Saale, DE;
Shuai-hua Ji, Beijing, CN;
Xi Chen, Beijing, CN;
Liang Fu, Winchester, MA (US);
Junwei Liu, Cambridge, MA (US);
Kai Chang, Halle/Saale, DE;
Shuai-Hua Ji, Beijing, CN;
Xi Chen, Beijing, CN;
Liang Fu, Winchester, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.