The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Apr. 15, 2015
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Jinho Ahn, Seoul, KR;
Jaeuk Lee, Yangsan-si, KR;
Seongchul Hong, Seoul, KR;
Seungmin Lee, Busan, KR;
Kilbock Lee, Seoul, KR;
Jungsik Kim, Seongnam-si, KR;
Junghwan Kim, Seoul, KR;
Abstract
A pellicle for EUV lithography is provided. The pellicle for EUV lithography may improve strength of a pellicle film by having a strength reinforcing layer including a first coupling layer and a carbon nanostructure disposed on a first inorganic layer, the first coupling layer here increase coupling strength between the first inorganic layer and the strength reinforcing layer, and a strength reinforcing layer including a carbon nanostructure. Also, a pellicle for EUV lithography according to another embodiment and a method of fabricating the same are provided. The pellicle for EUV lithography includes a plurality of holes and is a porous thin film made of a material with an extinction coefficient less than or equal to 0.02, and a diameter of the holes is less than or equal to 1 μm. Accordingly, improved strength is achievable because thickness may be made large with still having high EUV transmission.