The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jul. 08, 2015
Qualcomm Incorporated, San Diego, CA (US);
Michael Arn Nix, Austin, TX (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Apparatus and method are disclosed for measuring a load current supplied to one or more integrated circuit cores. The apparatus includes a power gating field effect transistor (FET) comprising a gate, a source, and a drain, wherein the source is coupled to a voltage rail, wherein the drain is coupled to a load, and wherein the gate is configured to receive a gating voltage to selectively turn on the power gating FET to allow a load current to flow between the voltage rail and the load; and a differential amplifier configured to generate a current-related voltage related to the load current by applying a gain to an input voltage based on a drain-to-source voltage of the power gating FET, wherein the gain varies inversely with the input voltage in response to variation in temperature or gate-to-source voltage of the power gating FET.