The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2018

Filed:

Aug. 10, 2015
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Yuudai Kamada, Tokyo, JP;

Atsushi Isobe, Tokyo, JP;

Noriyuki Sakuma, Tokyo, JP;

Takashi Oshima, Tokyo, JP;

Yuki Furubayashi, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01P 15/125 (2006.01); G01P 15/08 (2006.01);
U.S. Cl.
CPC ...
G01P 15/125 (2013.01); B81B 2203/0109 (2013.01); G01P 2015/0831 (2013.01); G01P 2015/0837 (2013.01);
Abstract

A low-noise and high-sensitivity inertial sensor is provided. On the assumption that a movable portion VUand a movable portion VUare formed in the same SOI layer, the movable portion VUand the movable portion VUare mechanically connected to each other by a mechanical coupling portion MCU even while these movable portions are electrically isolated from each other. Thereby, according to a sensor element SE in the invention, it is possible to further suppress a shift between the capacitance of a MEMS capacitorand the capacitance of a MEMS capacitor


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