The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jul. 07, 2016
Applicant:
General Electric Company, Schenectady, NY (US);
Inventors:
An-Ping Zhang, Rexford, NY (US);
Anthony John Murray, Lebanon, PA (US);
Rui Chen, Clifton Park, NY (US);
Assignee:
GENERAL ELECTRIC COMPANY, Schenectady, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 33/543 (2006.01); B82Y 15/00 (2011.01); G01N 27/327 (2006.01); G01N 27/414 (2006.01); G01N 33/545 (2006.01); G01N 33/53 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G01N 33/54373 (2013.01); B82Y 15/00 (2013.01); G01N 27/327 (2013.01); G01N 27/4145 (2013.01); G01N 27/4146 (2013.01); G01N 33/545 (2013.01); B82Y 40/00 (2013.01);
Abstract
A biosensing FET device, comprising a plurality of nanostructured SOI channels, that is adapted to operate in solutions having a high ionic strength and provides improves sensitivity and detection. Generally, the biosensing device comprises an underlying substrate layer, an insulator and a semiconductor layer and a plurality of channels in the semiconductor layer comprising a plurality of whole or partially formed nanopores in the channels.