The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Mar. 11, 2014
Jun Woo Lee, Uiwang-si, KR;
Sung Min Kim, Uiwang-si, KR;
IN Hwan Kim, Uiwang-si, KR;
Baek Soung Park, Uiwang-si, KR;
Su MI Lim, Uiwang-si, KR;
Jae Won Choi, Uiwang-si, KR;
Jun Woo Lee, Uiwang-si, KR;
Sung Min Kim, Uiwang-si, KR;
In Hwan Kim, Uiwang-si, KR;
Baek Soung Park, Uiwang-si, KR;
Su Mi Lim, Uiwang-si, KR;
Jae Won Choi, Uiwang-si, KR;
CHEIL INDUSTRIES, INC., Gumi-si, Gyeongsangbuk-Do, KR;
Abstract
An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof.