The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jul. 07, 2015
Applicant:
Ulis, Veurey Voroize, FR;
Inventors:
Jérôme Favier, Saint Laurent du Pont, FR;
David Bunel, Moirans, FR;
Assignee:
ULIS, Veurey Voroize, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 31/18 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); G01J 5/20 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0038 (2013.01); B81C 1/00269 (2013.01); B81C 1/00285 (2013.01); G01J 5/20 (2013.01); H01L 23/564 (2013.01); H01L 31/186 (2013.01); B81B 2201/0207 (2013.01); B81C 2203/019 (2013.01); B81C 2203/0145 (2013.01); H01L 2224/48091 (2013.01);
Abstract
A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion. Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.