The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Mar. 16, 2017
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiki Seshita, Kawasaki Kanagawa, JP;
Yasuhiko Kuriyama, Yokohama Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A high-frequency semiconductor amplifier circuit includes a first transistor provided on a SOI (Silicon on Insulator) substrate having a grounded source, a second transistor provided on the SOI substrate and cascode-connected to the first transistor, and a bias generation circuit provided on the SOI substrate and generating a gate voltages for the first and second transistors, and a first voltage for a drain of the second transistor. The bias generation circuit sets the gate voltage of the first transistor to a voltage between a second voltage and a third voltage, wherein the gate voltage is smaller than a voltage between a drain-to-source voltage of the first transistor, and wherein the second voltage is a threshold voltage of the first transistor and the third voltage is a gate-to-source voltage at which a second derivative of a square root of the drain current with respect to the gate-to-source voltage becomes a maximum.