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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9954175 B1

PDFFull Text
Date of Patent:
Apr. 24, 2018

Filed:

Aug. 06, 2015

Carbon nanotube-graphene hybrid transparent conductor and field effect transistor

Applicants:

International Business Machines Corporation, Armonk, NY (US);

Egypt Nanotechnology Center, Cairo, EG;

Inventors:

Ageeth A. Bol, Yorktown Heights, NY (US);

Bhupesh Chandra, Jersey City, NJ (US);

Amal Kasry, White Plains, NY (US);

Ahmed Maarouf, Mohegan Lake, NY (US);

Glenn J. Martyna, Croton on Hudson, NY (US);

George S. Tulevski, White Plains, NY (US);

Assignees:

International Business Machines Corporation, Armonk, NY (US);

Egypt Nanotechnology Center, Cairo, EG;

Attorney:

Ryan, Mason & Lewis, LLP

Primary Examiner:

Daniel H Miller

Int. Cl.
CPC ...
B32B 9/00 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); C23C 16/26 (2006.01); H01B 1/04 (2006.01); H01L 51/10 (2006.01); H01L 29/16 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); C01B 32/158 (2017.01); C01B 32/182 (2017.01); C01B 32/186 (2017.01); C01B 32/192 (2017.01); H01L 29/06 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 51/0048 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); C01B 32/158 (2017.08); C01B 32/182 (2017.08); C01B 32/186 (2017.08); C01B 32/192 (2017.08); C23C 16/26 (2013.01); H01B 1/04 (2013.01); H01L 29/1606 (2013.01); H01L 29/66742 (2013.01); H01L 29/778 (2013.01); H01L 29/78618 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 51/0025 (2013.01); H01L 51/0545 (2013.01); H01L 51/0562 (2013.01); H01L 51/102 (2013.01); H01L 51/105 (2013.01); B82Y 30/00 (2013.01); C01B 2202/00 (2013.01); C01B 2204/00 (2013.01); H01L 29/0673 (2013.01); H01L 51/0566 (2013.01); Y10S 977/742 (2013.01); Y10S 977/75 (2013.01); Y10S 977/938 (2013.01); Y10T 428/30 (2015.01);
Abstract

A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.

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