The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Aug. 19, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Keon-Hun Lee, Seoul, KR;

Eun-Deok Sim, Yongin-si, KR;

Suk-Ho Yoon, Seoul, KR;

Jeong-Wook Lee, Yongin-si, KR;

Do-Young Rhee, Seoul, KR;

Kee-Won Lee, Suwon-si, KR;

Chul-Min Kim, Gunpo-si, KR;

Tae-Bang Nam, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01H 13/83 (2006.01); H01L 33/32 (2010.01); H01L 33/54 (2010.01); H01L 33/62 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 33/025 (2013.01); H01L 33/54 (2013.01); H01L 33/62 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48237 (2013.01); H01L 2924/181 (2013.01);
Abstract

Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.


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