The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

May. 16, 2017
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chien-Fu Huang, Hsinchu, TW;

Shiuan-Leh Lin, Hsinchu, TW;

Chih-Chiang Lu, Hsinchu, TW;

Chia-Liang Hsu, Hsinchu, TW;

Assignee:

Epistar Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 33/46 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01); H01L 2933/0091 (2013.01);
Abstract

The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on the second semiconductor optical layer; wherein a difference between the lattice constant of the intermediate layer and the lattice constant of the first semiconductor optical layer is greater than 2.3 Å.


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