The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Jun. 29, 2015
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Kohei Miyoshi, Himeji, JP;
Masashi Tsukihara, Himeji, JP;
USHIO DENKI KABUSHIKI KAISHA, Tokyo, JP;
Abstract
An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of AlGaInN (0<x1<1, 0<y1<1, 0<z1<1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of InGaN (0<x2<1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of AlGaInN (0<x3<1, 0<y3<1, 0≤z3<1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.