The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Oct. 29, 2014
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Arie Shahar, Moshav Magshimim, IL;

Yaron Glazer, Rehovot, IL;

Jeffrey Levy, Tel Aviv, IL;

Avishai Ofan, Modiin, IL;

Rotem Har-Lavan, Nes Harim, IL;

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/08 (2006.01); G01T 1/24 (2006.01); H01L 31/0296 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/085 (2013.01); G01T 1/24 (2013.01); G01T 1/249 (2013.01); H01L 31/0296 (2013.01); H01L 31/02966 (2013.01); H01L 31/022408 (2013.01); H01L 31/1828 (2013.01); H01L 31/1832 (2013.01); H01L 31/1864 (2013.01);
Abstract

A radiation detector is provided including a cathode, an anode, and a semiconductor wafer. The semiconductor wafer has opposed first and second surfaces. The cathode is mounted to the first surface, and the anode is mounted to the second surface. The semiconductor wafer is configured to be biased by a voltage between the cathode and the anode to generate an electrical field in the semiconductor wafer and to generate electrical signals responsive to absorbed radiation. The electrical field has an intensity having at least one local maximum disposed proximate to a corresponding at least one of the first surface or second surface.


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