The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Jan. 10, 2017
Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

Roberto Simola, Trets, FR;

Pascal Fornara, Pourrières, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/866 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/866 (2013.01); H01L 29/0653 (2013.01); H01L 29/0692 (2013.01); H01L 29/407 (2013.01); H01L 29/66106 (2013.01); H01L 29/7391 (2013.01);
Abstract

The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of the substrate, and positioned between a an anode region having a first conductivity type and a cathode region having a second conductivity type, the cathode region extending from the surface of the substrate. A first conducting region is configured to generate a first electric field perpendicular to the plane of the Zener diode junction upon application of a first voltage to the first conducting region, and a second conducting region is configured to generate a second electric field along the plane of the Zener diode junction upon application of a second voltage to the second conducting region.


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