The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Oct. 10, 2016
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Motonobu Sato, Isehara, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A compound semiconductor device includes: a substrate; a channel layer over the substrate; a carrier supply layer over the channel layer; a gate electrode, a source electrode and a drain electrode above the channel layer and the carrier supply layer; and an insulating film that covers the carrier supply layer between the source electrode and the drain electrode. The insulating film includes: a first region that contains anion under the gate electrode; and a second region on the source electrode side or on the drain electrode side of the first region, an anion concentration in the second region being lower than an anion concentration in the first region.