The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
May. 06, 2016
Applicant:
Hrl Laboratories Llc, Malibu, CA (US);
Inventors:
David F. Brown, Woodland Hills, CA (US);
Keisuke Shinohara, Thousand Oaks, CA (US);
Miroslav Micovic, Thousand Oaks, CA (US);
Andrea Corrion, Santa Monica, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 27/095 (2006.01); H01L 29/66 (2006.01); H01L 21/8252 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7784 (2013.01); H01L 21/26546 (2013.01); H01L 21/8252 (2013.01); H01L 27/095 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01);
Abstract
A monolithically integrated device includes a substrate, a first set of Group III nitride epitaxial layers grown for a first HFET on a first region of the substrate, and a second set of Group III nitride epitaxial layers for a second HFET grown on a second region of the substrate.