The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Jun. 20, 2016
Applicant:

Infineon Technologies Americas Corp., El Segundo, CA (US);

Inventors:

Chan Kyung Choi, Woodbury, MN (US);

Mihir Tungare, Roseville, MN (US);

Peter Wook Kim, Stillwater, MN (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 29/06 (2013.01); H01L 29/10 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01);
Abstract

There are disclosed herein various implementations of a semiconductor component including a protrusion propagation body. The semiconductor component includes a substrate, a III-Nitride intermediate stack including the protrusion propagation body situated over the substrate, a III-Nitride buffer layer situated over the group III-V intermediate stack, and a III-Nitride device fabricated over the group III-V buffer layer. The protrusion propagation body includes at least a protrusion generating layer and two or more protrusion spreading multilayers.


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