IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9954079 B1

PDFFull Text
Date of Patent:
Apr. 24, 2018

Filed:

Dec. 09, 2015

Ldmos power semiconductor device and manufacturing method of the same

Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Salvatore Cascino, Gravina di Catania, IT;

Leonardo Gervasi, San Giovanni la Punta, IT;

Antonello Santangelo, Belpasso, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Su C Kim

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 29/40 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 21/26586 (2013.01); H01L 21/823418 (2013.01); H01L 27/088 (2013.01); H01L 29/0878 (2013.01); H01L 29/0886 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/66689 (2013.01); H01L 29/66719 (2013.01); H01L 29/66727 (2013.01); H01L 29/7802 (2013.01); H01L 21/823487 (2013.01); H01L 29/063 (2013.01); H01L 29/0634 (2013.01); H01L 29/1095 (2013.01); H01L 29/4175 (2013.01); H01L 29/4933 (2013.01); H01L 29/66613 (2013.01); H01L 29/7835 (2013.01);
Abstract

Methods form an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

Find Patent Forward Citations

Loading…