The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Jun. 06, 2016
Applicants:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Jiangnan University, Wuxi, Jiangsu, CN;

Inventors:

Yuqiang Ding, Jiangsu, CN;

Chao Zhao, Kessel-lo, BE;

Jinjuan Xiang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01L 29/49 (2006.01); C23C 16/02 (2006.01); C23C 16/08 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); C23C 16/0209 (2013.01); C23C 16/08 (2013.01); C23C 16/18 (2013.01); C23C 16/45527 (2013.01); H01L 21/28088 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract

A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I); and the aluminum precursor and the titanium precursor are brought into contact with the substrate so that a titanium-aluminum alloy thin film is formed on the surface of the substrate by vapor deposition. The method solves the problem of poor step coverage ability and the problem of incomplete filling with regard to the small-size devices by the conventional methods. Meanwhile, the formation of titanium-aluminum alloy thin films with the aid of plasma is avoided so that the substrate is not damaged by plasma.


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