The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Aug. 24, 2016
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Soyoung Noh, Goyang-si, KR;

Jinchae Jeon, Paju-si, KR;

Seungchan Choi, Paju-si, KR;

Junho Lee, Paju-si, KR;

Youngjang Lee, Seoul, KR;

Sungbin Ryu, Paju-si, KR;

Kitae Kim, Seoul, KR;

Bokyoung Cho, Seoul, KR;

Jeanhan Yoon, Paju-si, KR;

Uijin Chung, Goyang-si, KR;

Jihye Lee, Seoul, KR;

Eunsung Kim, Gunpo-si, KR;

Hyunsoo Shin, Paju-si, KR;

Kyeongju Moon, Seoul, KR;

Hyojin Kim, Seoul, KR;

Wonkyung Kim, Busan, KR;

Jeihyun Lee, Ulsan, KR;

Soyeon Je, Goyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 49/02 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1248 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/1288 (2013.01); H01L 27/3258 (2013.01); H01L 28/60 (2013.01); H01L 29/41733 (2013.01); H01L 27/3262 (2013.01); H01L 29/7869 (2013.01); H01L 29/78675 (2013.01);
Abstract

A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.


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