The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Feb. 13, 2017
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shinpei Matsuda, Atsugi, JP;
Masayuki Sakakura, Isehara, JP;
Yuki Hata, Atsugi, JP;
Shuhei Nagatsuka, Atsugi, JP;
Yuta Endo, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A semiconductor device with high design flexibility is provided. A first transistor and a second transistor having electrical characteristics different from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. For example, semiconductor materials with different electron affinities are used for a semiconductor layer in which a channel of the first transistor is formed and a semiconductor layer in which a channel of the second transistor is formed. This allows the threshold voltages of the first transistor and the second transistor to differ from each other. Forming a gate electrode using a damascene process enables miniaturization and high density of the transistors. Furthermore, a highly-integrated semiconductor device is provided.