The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Jul. 26, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Naoki Yasuda, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/11582 (2017.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/3065 (2013.01); H01L 28/00 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, and a charge storage film. The stacked body is provided on the substrate. The stacked body includes a plurality of first insulating films and a plurality of electrode films alternately stacked one layer by one layer. The semiconductor pillar is provided inside the stacked body and extends in a stacking direction of the stacked body. The charge storage film is provided between the semiconductor pillar and each of the electrode films. The plurality of first insulating films include a first portion surrounding the semiconductor pillar and a second portion provided between the first portion and the semiconductor pillar, the second portion having a dielectric constant higher than a dielectric constant of the first portion.


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