The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Mar. 29, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

John M. Safran, Wappingers Falls, NY (US);

Sami Rosenblatt, White Plains, NY (US);

Michael S. Cranmer, Poughkeepsie, NY (US);

Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/326 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/326 (2013.01); H01L 21/76898 (2013.01); H01L 22/14 (2013.01); H01L 22/32 (2013.01);
Abstract

Device structures involving a conductor-filled via or trench, methods of forming such device structures, and methods of operating such device structures. A doped region is formed in the substrate. An opening, such as a via or trench, is formed that extends through the doped region and into a portion of the substrate beneath the doped region. A conductive plug in formed in the opening to provide the conductor-filled via or trench. The opening is positioned and dimensioned relative to a position and dimensions of the doped region to divide the doped region into a first section and a second section that is disconnected from the first section by the opening.


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