The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Aug. 18, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Chiara Marchiori, Yorktown Heights, NY (US);
Federico Zipoli, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/20 (2006.01); H01L 21/336 (2006.01); H01L 21/283 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28264 (2013.01); H01L 21/02115 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02181 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02538 (2013.01); H01L 29/20 (2013.01); H01L 29/517 (2013.01); H01L 29/66522 (2013.01);
Abstract
This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface.