The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Dec. 21, 2016
Globalfoundries Inc., Grand Cayman, KY;
Steven Shank, Jericho, VT (US);
Randall Brault, Essex Junction, VT (US);
Jay Burnham, Franklin, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Device structures for field-effect transistors and methods of forming device structures for a field-effect transistor. A first dielectric layer is formed on a semiconductor layer and nitrided. A nitrogen-enriched layer is formed at a first interface between the first dielectric layer and the semiconductor layer. Another nitrogen-enriched layer is formed at a second interface between the semiconductor layer and a second dielectric layer. Device structures may include field-effect transistors that include one, both, and/or neither of the nitrogen-enriched layers.