The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Sep. 06, 2016
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventor:
Akira Katayama, Seoul, KR;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 7/06 (2006.01); G11C 11/16 (2006.01); G11C 7/04 (2006.01); G11C 7/14 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 7/065 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); G11C 7/04 (2013.01); G11C 7/14 (2013.01); G11C 7/18 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/79 (2013.01);
Abstract
According to one embodiment, a memory device includes a sense amplifier including a first input node and a second input node, a first path including a memory cell to be selectively connected to the first input node, and a second path including a reference cell to be selectively connected to the second input node, and is configured to change an input value at the second input node in accordance with the state of the memory cell.