The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Jul. 13, 2016
Applicant:

Epostar Electronics Corp., Hsinchu, TW;

Inventors:

Heng-Lin Yen, Hsinchu County, TW;

Yu-Hua Hsiao, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 29/42 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1072 (2013.01); G11C 29/42 (2013.01); G11C 29/50004 (2013.01); G11C 2029/5004 (2013.01);
Abstract

A decoding method, a memory storage device and a memory control circuit unit are provided. The decoding method includes: reading memory cells based on a default hard-decision voltage level and decoding the obtained hard-bit information; if the decoding fails, reading the memory cells based on default soft-decision voltage levels and then decoding the obtained soft-bit information; if the decoding still fails, reading the memory cells based on first test voltage levels to obtain first soft-bit information and reading the memory cells based on second test voltage levels to obtain second soft-bit information; obtaining a first estimating parameter and a second estimating parameter according to the first soft-bit information and the second soft-bit information, respectively; and updating the default hard-decision voltage level according to the first estimating parameter and the second estimating parameter. As a result, a decoding efficiency can be improved.


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