The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Jan. 16, 2017
International Business Machines Corporation, Armonk, NY (US);
Sonali Gupta, Bangalore, IN;
Arindam Raychaudhuri, Bangalore, IN;
International Business Machines Corporation, Armonk, NY (US);
Abstract
An apparatus includes a plurality of mirrored transistor pairs configured to provide a first output current, and a second output current that is substantially equal to the first output current. The apparatus also includes a load isolation transistor configured to pass the first output current along to a resistive load and a first and a second biasing transistor configured to bias the load isolation transistor with a load biasing voltage. A gate and drain of the second biasing transistor may be connected to a gate of the load isolation transistor and a drain of the first biasing transistor. Furthermore, a source of the second biasing transistor may be connected to a gate of the first biasing transistor. The width-to-length ratio of the load isolation transistor, the first biasing transistor, and the second biasing transistor are selected to eliminate PTAT dependencies in the first output current.