The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Jun. 08, 2013
Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangdong, CN;
Yiqiang Chen, Guangdong, CN;
Yunfei En, Guangdong, CN;
Xiaowen Zhang, Gunagdong, CN;
Yun Huang, Guangdong, CN;
Yudong Lu, Guangdong, CN;
Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Tianhe District, Guangzhou, Guangdong, CN;
Abstract
A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime τ1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point τ2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time τ3, acquiring a remaining life of electromigration failure corresponding to τ2' based on τ1, τ2 and τ3. A device for remaining life prediction for electromigration failure is also disclosed.