The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Nov. 16, 2016
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); G01N 27/414 (2006.01); G01N 27/416 (2006.01); C23C 14/16 (2006.01); C23C 14/58 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 29/47 (2006.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4141 (2013.01); C23C 14/16 (2013.01); C23C 14/5846 (2013.01); G01N 27/416 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/242 (2013.01); H01L 29/47 (2013.01); G01N 33/0054 (2013.01);
Abstract
A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.