The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Feb. 17, 2014
Applicant:
Samsung Research America, Inc., Mountain View, CA (US);
Inventor:
Justin W. Kamplain, Bartlesville, OK (US);
Assignee:
SAMSUNG RESEARCH AMERICA, INC., Mountain View, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/16 (2010.01); C09K 11/08 (2006.01); H01L 33/30 (2010.01); C09K 11/63 (2006.01); C09K 11/70 (2006.01); C01B 17/20 (2006.01); C01B 19/00 (2006.01); C01B 25/08 (2006.01); H01L 33/00 (2010.01); H01L 33/26 (2010.01);
U.S. Cl.
CPC ...
C09K 11/08 (2013.01); C01B 17/20 (2013.01); C01B 19/002 (2013.01); C01B 19/007 (2013.01); C01B 25/082 (2013.01); C09K 11/0805 (2013.01); C09K 11/63 (2013.01); C09K 11/70 (2013.01); H01L 33/16 (2013.01); C01P 2002/84 (2013.01); C01P 2004/52 (2013.01); C01P 2004/64 (2013.01); C01P 2004/80 (2013.01); C01P 2004/86 (2013.01); C01P 2006/40 (2013.01); H01L 33/005 (2013.01); H01L 33/26 (2013.01); H01L 33/30 (2013.01);
Abstract
A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.