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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9947831 B1

PDFFull Text
Date of Patent:
Apr. 17, 2018

Filed:

Apr. 21, 2017

Light emitting diode device having iii-nitride nanowires, a shell layer and a continuous layer

Applicant:

Qunano Ab, Lund, SE;

Inventors:

Werner Seifert, Sebnitz, DE;

Damir Asoli, Malmo, SE;

Zhaoxia Bi, Lund, SE;

Jonas Ohlsson, Malmo, SE;

Lars Ivar Samuelson, Malmo, SE;

Assignee:

QUNANO AB, Lund, SE;

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Andres Munoz

Int. Cl.
CPC ...
H01L 33/32 (2010.01); B82Y 10/00 (2011.01); C30B 25/00 (2006.01); C30B 29/40 (2006.01); C30B 29/60 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 33/06 (2010.01); H01L 21/20 (2006.01); H01L 33/24 (2010.01); H01L 33/00 (2010.01); H01L 33/18 (2010.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); B82Y 10/00 (2013.01); C30B 25/00 (2013.01); C30B 29/406 (2013.01); C30B 29/60 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02603 (2013.01); H01L 21/02636 (2013.01); H01L 21/02639 (2013.01); H01L 21/20 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/2003 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01L 33/24 (2013.01); B82Y 40/00 (2013.01); H01L 33/007 (2013.01); H01L 33/18 (2013.01); Y10S 977/932 (2013.01);
Abstract

A light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires, a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer, and a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer. The at least one Group III-nitride pyramidal shell layer is located in an active region of the LED. The plurality of Group III-nitride nanowires are doped one of n- or p-type. The continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires. A distance from a side portion of the continuous contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of an apex of the continuous contact layer to the plurality of Group III-nitride nanowires.

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