The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Feb. 01, 2017
Applicant:
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Inventors:
Sheng-hsien Hsu, Xiamen, CN;
Gong Chen, Xiamen, CN;
Su-hui Lin, Xiamen, CN;
Yu-chieh Huang, Xiamen, CN;
Chen-ke Hsu, Xiamen, CN;
Assignee:
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01L 2933/0058 (2013.01);
Abstract
A patterned sapphire substrate has a first surface and a second surface opposite to each other; the connection zone between first protrusion portions has no C surface (i.e. (0001) surface); and the patterned sapphire substrate may have no C surface on the growth surface to reduce the threading dislocation density of the GaN epitaxial material on the sapphire substrate.