The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Jul. 24, 2014
Newsouth Innovations Pty Limited, Sydney, New South Wales, AU;
Brett Jason Hallam, Bexley, AU;
Matthew Bruce Edwards, Elanora Heights, AU;
Stuart Ross Wenham, Cronulla, AU;
Phillip George Hamer, Kensington, AU;
Catherine Emily Chan, Randwick, AU;
Chee Mun Chong, Bellevue Hill, AU;
Pei Hsuan Lu, Rockdale, AU;
Ly Mai, Sefton, AU;
Li Hui Song, Kingsford, AU;
Adeline Sugianto, Malabar, AU;
Alison Maree Wenham, Cronulla, AU;
Guang Qi Xu, Randwick, AU;
Newsouth Innovations PTY Limited, New South Wales, AU;
Abstract
A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant-hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without rebinding to the dopant atoms.