The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Feb. 25, 2013
Applicant:
Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;
Inventors:
Seiki Teraji, Ibaraki, JP;
Kazunori Kawamura, Ibaraki, JP;
Hiroto Nishii, Ibaraki, JP;
Taichi Watanabe, Ibaraki, JP;
Assignee:
NITTO DENKO CORPORATION, Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0216 (2014.01); H01L 31/032 (2006.01); H01L 31/0749 (2012.01); H01L 31/0224 (2006.01); H01L 31/0328 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); H01L 31/022466 (2013.01); H01L 31/0322 (2013.01); H01L 31/0328 (2013.01); H01L 31/03923 (2013.01); H01L 31/0749 (2013.01); Y02E 10/541 (2013.01);
Abstract
In order to provide a CIGS compound solar cell with a high conversion efficiency, a CIGS compound solar cell including a rear electrode layer, a CIGS light absorbing layer, a buffer layer, and a transparent electrode layer in this order over a substrate is configured such that the buffer layer comprises a mixed crystal of a Group IIa metal and zinc oxide, and characteristics of the mixed crystal as shown by X-ray diffraction satisfy the following formula (1):0.5≤/()<1  (1)(where none of A, B, C are 0)