The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Jul. 21, 2015
Applicant:

Japan Display Inc., Minato-ku, JP;

Inventors:

Hidekazu Miyake, Tokyo, JP;

Arichika Ishida, Tokyo, JP;

Norihiro Uemura, Tokyo, JP;

Hiroto Miyake, Tokyo, JP;

Isao Suzumura, Tokyo, JP;

Yohei Yamaguchi, Tokyo, JP;

Assignee:

Japan Display Inc., Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 2001/13685 (2013.01); G02F 2202/104 (2013.01);
Abstract

According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a second semiconductor layer, a first electrode and a second electrode. The gap between the bottom surface of the gate electrode and the upper surface of the first channel region of the first semiconductor layer is larger than the gap between the upper surface of the gate electrode and the bottom surface of the second channel region of the second semiconductor layer.


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