The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Dec. 22, 2016
Applicant:
Japan Display Inc., Minato-ku, JP;
Inventors:
Assignee:
Japan Display Inc., Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); G02F 1/136213 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01);
Abstract
According to one embodiment, a thin-film transistor includes a first insulating film, an oxide semiconductor layer provided on the first insulating film and a second insulating film provided on the oxide semiconductor layer, and at least one of the first insulating film and the second insulating film includes a first region in contact with the oxide semiconductor layer and a second region further distant from the oxide semiconductor layer than the first region, and the second region has an argon concentration higher than that of the first region.