The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Feb. 15, 2017
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Hidekazu Miyairi, Kanagawa, JP;
Kazuya Hanaoka, Kanagawa, JP;
Suguru Hondo, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagaw-ken, JP;
Abstract
A semiconductor device that operates at high speed. A semiconductor device with favorable switching characteristics. A highly integrated semiconductor device. A miniaturized semiconductor device. The semiconductor device is formed by: fainting a semiconductor film including an opening, on an insulating surface; forming a conductive film over the semiconductor film and in the opening, and removing the conductive film over the semiconductor film to form a conductive pillar in the opening; forming an island-shaped mask over the conductive pillar and the semiconductor film; etching the conductive pillar and the semiconductor film using the mask to form a first electrode and a first semiconductor; forming a gate insulating film on a top surface and a side surface of the first semiconductor; and forming a gate electrode that is in contact with a top surface of the gate insulating film and faces the top surface and the side surface of the first semiconductor.