The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Aug. 13, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Hong He, Schenectady, NY (US);
Chiahsun Tseng, Wynantskill, NY (US);
Junli Wang, Singerlands, NY (US);
Chun-chen Yeh, Clifton Park, NY (US);
Yunpeg Yin, Niskayuna, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.