The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Jan. 26, 2017
Renesas Electronics Corporation, Tokyo, JP;
Atsushi Amo, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To reduce a manufacturing cost of a semiconductor device in which a high breakdown voltage transistor and a trench capacitive element in which a part of an upper electrode is embedded in a trench formed in a main surface of a semiconductor substrate are mixed together. After an insulating film is formed over a main surface of a semiconductor substrate so as to cover a trench formed in the main surface of the semiconductor substrate, the insulating film is processed to form an upper electrode of a capacitive element, a gate insulating film which insulates the semiconductor substrate to be a lower electrode, and a gate insulting film of a high breakdown voltage transistor.