The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Mar. 21, 2016
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Guangcai Yuan, Beijing, CN;
Woobong Lee, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42384 (2013.01); H01L 29/401 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 2029/42388 (2013.01);
Abstract
A method for manufacturing the thin film transistor, including: forming a gate, an active layer and a gate insulating layer disposed between the gate and the active layer; wherein the gate insulating layer is in a double-layer structure comprising a first gate insulating layer next to the gate and a second gate insulating layer next to the active layer, and one of the first gate insulating layer and the second gate insulating layer is annealed.