The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Oct. 28, 2016
Applicant:
Fairchild Korea Semiconductor Ltd., Bucheon-si, KR;
Inventors:
Hye-mi Kim, Bucheon-si, KR;
Sun-hak Lee, Anyang-si, KR;
Assignee:
Fairchild Korea Semiconductor Ltd., Bucheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/08 (2006.01); H01L 29/861 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0642 (2013.01); H01L 29/402 (2013.01); H01L 29/66136 (2013.01); H01L 29/861 (2013.01); H01L 27/0629 (2013.01);
Abstract
A power semiconductor device includes: a substrate; an anode electrode and a cathode electrode disposed on the substrate; a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity; an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration; and an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.